Growth and characterization of N-doped p-type Cu2O films by RF Reactive magnetron sputtering

被引：0
|
作者：
Lin L. [1 ]
Li B. [1 ]
Lu L. [1 ]
Shen H. [1 ]
Liu B. [1 ]
机构：
[1] College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics
来源：
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2011年 / 31卷 / 05期
关键词：
Cu[!sub]2[!/sub]O; Hall effect; Magnetron sputtering; XPS;
D O I：
10.3969/j.issn.1672-7126.2011.05.12
中图分类号：
学科分类号：
摘要：
The N-doped, p-type Cu2O films were deposited by rf reactive magnetron sputtering on glass substrates. The impacts of the growth conditions, including the N-doping levels, ratio of the N2/O2 flow rates, and sputtering power, on its properties were studied. Its microstructures and properties were characterized with X-ray diffraction, X-ray photoelectron spectroscopy (XPS), ultra-violet visible light (UV-Vis) spectroscopy, and Hall-effect measurements. The results show that the N impurity content and the ratio of the N2/O2 flow rates strongly affect its microstructures and properties. For instance, as the N-doping level increases, its crystalline structure deteriorates, whereas its optical band gap widens from about 2.28 eV to 2.47 eV. Moreover, its electrical properties tend to be more stable. At a N2/O2 ratio of 0.6, its resistivity was 1.5 Ω·cm; and its hole concentration and Hall mobility were found to be 2.16×1019 cm-3 and 0.5 cm2V-1s-1, respectively.
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页码：570 / 573
页数：3
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