Surface morphology and electrical properties control of p-InGaN by MOCVD growth temperature to improve LED light power

被引：0
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作者：
Han, Jun [1 ]
Xing, Yan-Hui [1 ]
Deng, Jun [1 ]
Zhu, Yan-Xu [1 ]
Xu, Chen [1 ]
Shen, Guang-Di [1 ]
机构：
[1] College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
来源：
Gongneng Cailiao/Journal of Functional Materials | 2011年 / 42卷 / 07期
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页码：1227 / 1229
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