Fluence-dependent formation of Zn and ZnO nanoparticles by ion implantation and thermal oxidation: An attempt to control nanoparticle size

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作者：
Amekura, H. [1 ]
Ohnuma, M. [1 ]
Kishimoto, N. [1 ]
Buchal, Ch. [2 ]
Mantl, S. [2 ]
机构：
[1] National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan
[2] Institut Fuer Bio-und Nanosysteme (IBN1-IT), Forschungszentrum Juelich GmbH, D-52425 Juelich, Germany
来源：
Journal of Applied Physics | 2008年 / 104卷 / 11期
关键词：
For possible control of the size of nanoparticles (NPs); the fluence-dependent formation of Zn and ZnO NPs by ion implantation with and without thermal oxidation was investigated by optical absorption spectroscopy; Rutherford backscattering spectrometry; and small-angle x-ray scattering (SAXS). The mean diameter and number density of Zn NPs in the as-implanted state in silica (SiO2) were determined by SAXS as 7 nm and 13 1017 cm-3; 12 nm and 3.8 1017 cm-3; and 12 nm and 3.2 1017 cm-3 for fluences of 0.50; 1.0; and; 2.0; 1017; ions/; cm2; respectively. With increasing fluence; the mean diameter of the NPs increases and the number density decreases. However; an upper limit of the NP size and Zn concentration in SiO2 is observed above the fluence of 1.0 1017 ions/ cm2 due to sputtering loss. Thermal annealing in oxygen gas at 700 °C for 1 h induces the transformation of Zn NPs to both ZnO NPs and the Zn2 SiO4 phase. With decreasing fluence; the branching ratio to the ZnO component decreases. This is because the reaction between tentatively formed ZnO NPs and the SiO2 substrate is enhanced by the higher surface-to-volume ratio of smaller NPs. At a fluence of 0.20 1017 ions/ cm2; almost no ZnO component was detected. The size control of Zn and ZnO NPs is therefore possible only in a limited fluence region. © 2008 American Institute of Physics;
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