Electrically-activated source extension graphene nanoribbon field effect transistor: Novel attributes and design considerations for suppressing short channel effects

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[1] Naderi, Ali

[2] Keshavarzi, Parviz

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Naderi, A. (a.naderi@kut.ac.ir) | 1600年 / Academic Press卷 / 72期

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[1] Electrically-activated source extension graphene nanoribbon field effect transistor: Novel attributes and design considerations for suppressing short channel effects
Naderi, Ali, 1600, Academic Press (72):
[2] Electrically-activated source extension graphene nanoribbon field effect transistor: Novel attributes and design considerations for suppressing short channel effects
Naderi, Ali
Keshavarzi, Parviz
SUPERLATTICES AND MICROSTRUCTURES, 2014, 72 : 305 - 318
[3] Nanoscale SOI MOSFETs with electrically induced source/drain extension: Novel attributes and design considerations for suppressed short-channel effects
Orouji, Ali A.
Kumar, M. Jagadesh
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[4] A Novel Graphene Nanoribbon Field Effect Transistor for Integrated Circuit Design
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[5] Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions
Ali Naderi
Journal of Computational Electronics, 2016, 15 : 347 - 357
[6] Bilayer graphene nanoribbon field-effect transistor with electrically embedded source-side gate
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Fazli, Roohallah
SUPERLATTICES AND MICROSTRUCTURES, 2020, 142 (142)
[7] Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions
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JOURNAL OF COMPUTATIONAL ELECTRONICS, 2016, 15 (02) : 347 - 357
[8] A novel graphene channel field effect transistor with Schottky tunneling source and drain
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Woo, Jason C. S.
ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2007, : 243 - 246
[9] A Quasi-Ballistic Model for Short Channel Monolayer Graphene Field Effect Transistor Including Scattering Effects
Bardhan, Sudipta
Sahoo, Manodipan
Samanta, Jagannath
Rahaman, Hafizur
IETE JOURNAL OF RESEARCH, 2024, : 7451 - 7462
[10] A computational study of short-channel effects in double-gate junctionless graphene nanoribbon field-effect transistors
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JOURNAL OF COMPUTATIONAL ELECTRONICS, 2019, 18 (04) : 1214 - 1221

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