Effect of irradiation on MOS transistor induced by focused ion beam

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作者：
Department of Material Science, Fudan University, Shanghai 200433, China [1 ]
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Guti Dianzixue Yanjiu Yu Jinzhan | 2007年 / 3卷 / 295-300期
关键词：
Electron irradiation - Focused ion beams - Gates (transistor) - Threshold voltage;
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