Fabrication and characterization of metal-oxide-nitride-oxynitride- polysilicon nonvolatile semiconductor memory device with silicon oxynitride (Si Ox Ny) as tunneling layer on glass

被引：0

作者：

Jung, Sungwook ^{[1
]}

Kim, Jaehong ^{[1
]}

Son, Hyukjoo ^{[1
]}

Hwang, Sunghyun ^{[1
]}

Jang, Kyungsoo ^{[1
]}

Lee, Jungin ^{[1
]}

Lee, Kwangsoo ^{[1
]}

Park, Hyungjun ^{[1
]}

Kim, Kyunghae ^{[1
]}

Yi, Junsin ^{[1
]}

Chung, Hokyoon ^{[2
]}

Choi, Byoungdeog ^{[2
]}

Lee, Kiyong ^{[2
]}

机构：

[1] School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea, Republic of

[2] Advanced Technology Institute, Samsung SDI, Yongin 442-391, Korea, Republic of

来源：

Journal of Applied Physics | 2007年 / 102卷 / 09期

关键词：

A nonvolatile semiconductor memory (NVSM) device with a metal-oxide-nitride-oxynitride-polysilicon (MONOS) structure on a rough polysilicon (poly-Si) surface was fabricated using a low-temperature process and poly-Si thin film transistor (TFT) technology on glass. For the fabrication of the NVSM device on glass; plasma-assisted oxynitridation was carried out using nitrous oxide (N2 O) as a reactive gas; due to the very rough surface of the poly-Si on glass annealed using an excimer laser. The ultrathin Si Ox Ny films obtained using the N2 O plasma have a very uniform distribution on poly-Si and similar contents of oxygen and nitrogen in the peaks and valleys of the grains. The NVSM devices having a MONOS structure with a tunneling layer of ultrathin Si Ox Ny on glass have suitable switching and charge retention characteristics for data storage. The results demonstrate that the NVSM device made using low-temperature poly-Si TFT technology on glass reported in this paper can be used in various types of display devices. © 2007 American Institute of Physics;

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摘要：

Journal article (JA)

引用

共 7 条

[1] Fabrication and characterization of metal-oxide-nitride-oxynitride-polysilicon nonvolatile semiconductor memory device with silicon oxynitride (SiOxNy) as tunneling layer on glass
Jung, Sungwook
Kim, Jaehong
Son, Hyukjoo
Hwang, Sunghyun
Jang, Kyungsoo
Lee, Jungin
Lee, Kwangsoo
Park, Hyungjun
Kim, Kyunghae
Yi, Junsin
Chung, Hokyoon
Choi, Byoungdeog
Lee, Kiyong
JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)
[2] Memory properties of oxide-nitride-oxynitride stack structure using ultra-thin oxynitrided film as tunneling layer for nonvolatile memory device on glass
Jung, Sungwook
Hwang, Sunghyun
Yi, J.
THIN SOLID FILMS, 2008, 517 (01) : 362 - 364
[3] Nonvolatile Poly-silicon Memory Device with Oxide-Nitride-Oxynitride Stack Structure on Glass for Flat Panel Display
Jung, Sungwook
Jo, Jaehyun
Jang, Kyungsoo
Son, Hyukjoo
Kim, Jaehong
Heo, Jongkyu
Hwang, Sunghyun
Kim, Kyunghae
Choi, Byoung-Deog
Yi, Junsin
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2009, 499 : 590 - 597
[4] Modeling of nonvolatile memory operation of polysilicon-oxide-nitride-oxide-semiconductor and analysis of program characteristics dependent on the trap distribution in the silicon-nitride layer
Imanaga, S
Aozasa, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (8A): : 5186 - 5198
[5] Modeling of nonvolatile memory operation of polysilicon-oxide-nitride- oxide-semiconductor and analysis of program characteristics dependent on the trap distribution in the silicon-nitride layer
Imanaga, Syunji
Aozasa, Hiroshi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2004, 43 (8 A): : 5186 - 5198
[6] Improvements of Performance and Reliability for Metal-Oxide-Nitride-Oxide-Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer
Chen, J. X.
Xu, J. P.
Liu, L.
Huang, X. D.
Lai, P. T.
Xu, H. X.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 14 (01) : 9 - 12
[7] Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO2 and HfON tunneling layer
Pyo, Jooyoung
Ihara, Akio
Zhang, Wendi
Nishino, Shuma
Ohmi, Shun-ichiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (SB)

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