The effect of tungsten trioxide thin films at ferroelectric-electrode boundaries on fatigue behaviour

被引：0
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作者：
Baxter, Paul [1 ]
Bowman, Robert M. [1 ]
Gregg, J. Marty [1 ]
机构：
[1] Centre for Nanostructured Media, IRCEP, Queen's University Belfast, Belfast BT7 INN, United Kingdom
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 5 PART 1期
关键词：
A conventional thin film capacitor heterostructure; consisting of sol-gel deposited lead zirconium titanate (PZT) layers with sputtered platinum top and bottom electrodes; was subjected to fatiguing pulses at a variety of frequencies. The fatigue characteristics were compared to those of a similarly processed capacitor in which a -20 nm tungsten trioxide layer had been deposited; using pulsed laser deposition; between the ferroelectric and upper electrode. The expectation was that; because of its ability to accommodate considerable oxygen non-stoichiometry; tungsten trioxide (WO3) might act as an efficient sink for any oxygen vacancies flushed to the electrode-ferroelectric boundary layer during repetitive switching; and hence would improve the fatigue characteristics of the thin film capacitor. However; it was found that; in general; the addition of tungsten trioxide actually increases the rate of fatigue. It appears that any potential benefit from the WO3; in terms of absorbing oxygen vacancies; is far outweighed by it causing dramatically increased charge injection in the system; ©2008 The Japan Society of Applied Physics;
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Journal article (JA)
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页码：3552 / 3555
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