Optical properties of Zn doped GaAs single crystals

被引：0
|
作者：
El-Nahass, M.M. [1 ]
Youssef, S.B. [1 ]
Ali, H.A.M. [1 ]
机构：
[1] Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo, Egypt
来源：
Journal of Optoelectronics and Advanced Materials | 2011年 / 13卷 / 01期
关键词：
Single crystals - Semiconducting gallium - Dispersion (waves) - Gallium arsenide - Light absorption - III-V semiconductors - Zinc - Carrier concentration;
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摘要：
The spectral distribution of the transmittance T and the reflectance R of Zn doped GaAs single crystals have been investigated. The optical constants n and k of GaAs:Zn are estimated in the wavelength range from 200 to 2500 nm. The type of electronic transition responsible for the optical absorption is direct allowed transition with energy gap found to be 1.38 eV. Single scattering mechanism was detected for GaAs:Zn crystals which referred to the acoustical vibrations in the wavelength range 930 - 2500 nm. The free carrier concentration was calculated theoretical and found to be 0.737×1017 cm-3. The dispersion parameters of GaAs:Zn single crystals were calculated in the normal dispersion region.
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页码：82 / 86
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