Sensitivity enhancement of AlGaAs/InGaAs/GaAs quantum well-based Hall device

被引：0
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作者：
Sghaier, H. [1 ]
Bouzaiene, L. [1 ]
Sfaxi, L. [1 ]
Maaref, H. [1 ]
机构：
[1] Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5000 Monastir, Tunisia
来源：
Journal of Applied Physics | 2006年 / 100卷 / 04期
关键词：
We have investigated the consequences of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs and we propose a quantum well structure for a Hall device with the goal of improving its performances. From self-consistent calculations we find that the electron concentration n s in the interface region is increased. This implies that one can have a wider spacer layer and still have the same ns with the result that the mobility is improved. This result should be valuable for many types of devices. We specifically consider Hall sensors; where it is desirable to have a low electron concentration and a high mobility. © 2006 American Institute of Physics;
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