Effects of the thickness of p-type GaN on light extraction of GaN based vertical light emitting diodes on silicon substrate

被引：0
|
作者：
Tao X.-X. [1 ]
Wang L. [1 ]
Liu Y.-S. [1 ]
Wang G.-X. [1 ]
Jiang F.-Y. [1 ]
机构：
[1] National Engineering Technology Research Center for LED on Silicon Substrate, Nanchang University
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2011年 / 32卷 / 10期
关键词：
GaN; LED; Light extraction; Thickness of p-type GaN; Vertical structure;
D O I：
10.3788/fgxb20113210.1069
中图分类号：
学科分类号：
摘要：
The relationship between the thickness d of p-type GaN and light extraction efficiency of GaN based vertical light emitting diodes (VLEDs) was described in this work. The VLEDs were grown on silicon by metal organic chemical vapour deposition (MOCVD). A series of VLEDs were fabricated with varied thickness of p-type GaN. It showed that the thickness d was in the order of wavelength and it had a significant influence on extraction efficiency due to interferences. The maximum in extraction efficiency was two times more than the neighboring minimum, which were located at 0.73λn and 1.01λn, respectively. Therefore, the extraction efficiency of VLEDs can be enhanced by optimizing the thickness of p-type GaN.
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页码：1069 / 1073
页数：4
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