Terahertz Gunn-like oscillations in InGaAs/InAlAs planar diodes

被引：0
|
作者：
Ṕrez, S. [1 ]
González, T. [1 ]
Pardo, D. [1 ]
Mateos, J. [1 ]
机构：
[1] Departamento de Física Aplicada, Facultad de Ciencias, Universidad de Salamanca, Plaza de la Merced whis/n, 37008 Salamanca, Spain
来源：
Journal of Applied Physics | 2008年 / 103卷 / 09期
关键词：
A microscopic analysis of self-generated terahertz current oscillations that take place in planar InAlAs/InGaAs slot diodes operating under dc bias is presented. An ensemble Monte Carlo simulation is used for the calculations. The onset of the oscillations is thresholdlike; for drain-source voltages surpassing 0.6 V. The Gunn-like mechanisms and the modulation of the injection of electrons into the recess-to-drain region; which alternatively takes place in the or L valley; are found at the origin of the phenomenon. Terahertz frequencies are reached because of the presence of ultrafast electrons in the region of interest. Extremely high velocities are achieved by (i) the effect of the recess; which focuses the electric field and launches very fast electrons into the drain region; and (ii) the influence of degeneracy; which significantly reduces the rate of scattering mechanisms and enhances the electron mobility in the channel. © 2008 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] Terahertz gunn-like oscillations in InGaAs/InAlAs planar diodes
    Perez, S.
    Gonzalez, T.
    Pardo, D.
    Mateos, J.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)
  • [2] On the geometrical tunabililty of THz Gunn-like oscillations in InGaAs/InAlAs slot diodes
    Perez, S.
    Mateos, J.
    Pardo, D.
    Gonzalez, T.
    16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 2009, 193
  • [3] Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes
    Novoa-Lopez, J. A.
    Paz-Martinez, G.
    Sanchez-Martin, H.
    Lechaux, Y.
    Iniguez-de-la-Torre, I.
    Gonzalez, T.
    Mateos, J.
    IEEE ELECTRON DEVICE LETTERS, 2021, 42 (08) : 1136 - 1139
  • [4] Gunn oscillations in planar heterostructure diodes
    Pilgrim, N. J.
    Khalid, A.
    Dunn, G. M.
    Cumming, D. R. S.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (07)
  • [5] Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes
    Garcia-Perez, O.
    Alimi, Y.
    Song, A.
    Iniguez-de-la-Torre, I.
    Perez, S.
    Mateos, J.
    Gonzalez, T.
    APPLIED PHYSICS LETTERS, 2014, 105 (11)
  • [6] Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode
    Khalid, Ata
    Dunn, G. M.
    Macpherson, R. F.
    Thoms, S.
    Macintyre, D.
    Li, C.
    Steer, M. J.
    Papageorgiou, V.
    Thayne, I. G.
    Kuball, M.
    Oxley, C. H.
    Montes Bajo, M.
    Stephen, A.
    Glover, J.
    Cumming, D. R. S.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (11)
  • [7] LOW-FREQUENCY SPONTANEOUS OSCILLATIONS OF CARRIER DENSITY IN PLANAR GUNN DIODES
    LISENKER, BS
    MARONCHUK, YE
    PREOBRAZHENSKAYA, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 101 - 101
  • [8] Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
    Lechaux, Y.
    Iniguez-de-la-Torre, I.
    Novoa-Lopez, J. A.
    Garcia-Perez, O.
    Sanchez-Martin, H.
    Millithaler, J. F.
    Vaquero, D.
    Delgado-Notario, J. A.
    Clerico, V
    Gonzalez, T.
    Mateos, J.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (11)
  • [9] InAlAs/InGaAs Interband Tunnel Diodes for SRAM
    Sutar, Surajit
    Zhang, Qin
    Seabaugh, Alan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (10) : 2587 - 2593
  • [10] Competition between Direct Detection Mechanisms in Planar Bow-Tie Microwave Diodes on the Base of InAlAs/InGaAs/InAlAs Heterostructures
    Suziedelis, Algirdas
    Asmontas, Steponas
    Gradauskas, Jonas
    Cerskus, Aurimas
    Pozela, Karolis
    Anbinderis, Maksimas
    SENSORS, 2023, 23 (03)
12345