Carrier gas dependence at initial processes for a-plane AlN growth on r-plane sapphire substrates by hydride vapor phase epitaxy

被引：0
|
作者：
Tajima, Jumpei [1 ]
Echizen, Chikashi [1 ]
Togashi, Rie [1 ]
Murakami, Hisashi [1 ]
Kumagai, Yoshinao [1 ]
Takada, Kazuya [2 ]
Koukitu, Akinori [1 ]
机构：
[1] Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
[2] Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247, Japan
来源：
Japanese Journal of Applied Physics | 2011年 / 50卷 / 5 PART 1期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
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中图分类号：
学科分类号：
摘要：
Cleaning - Hydrides - III-V semiconductors - Nitridation - Sapphire - Vapor phase epitaxy
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