CdS sensitized ZnO electrodes in photoelectrochemical cells

被引:0
|
作者
Dang T.C. [1 ]
Pham D.L. [2 ]
Nguyen H.L. [3 ]
Pham V.H. [4 ]
机构
[1] Faculty of Science, Hanoi University of Natural Resources and Environment, Tu Liem District, Hanoi
[2] Laboratory of Thin Film Physics and Technology, Institute of Materials Science, Vietnam Academy of Science and Technology, Hanoi
[3] Institute of Engineering Physics, Hanoi University of Technology, Hanoi
[4] Laboratory of Materials and Engineering of Fiber Optics, Institute of Materials Science, Vietnam Academy of Science and Technology, Hanoi
关键词
Cadmium sulfide; Photoelectrochemical cell; Zinc oxide;
D O I
10.1088/2043-6262/1/3/035010
中图分类号
学科分类号
摘要
In this work, ZnO nanocrystalline thin films were obtained by evaporating Zn films using a thermal evaporation technique and then thermal treatment. The results show that after annealing at 300, 350, 400 and 450 C for 6 h, the obtained ZnO thin films have macro-structures. The results show that at an annealing temperature of 450 C, the ZnO thin film has the best optical properties for photo-electrodes. The incorporation of cadmium sulfide (CdS) into ZnO macro-structure thin films was investigated. A CdS thin film was vacuum-deposited onto the pre-deposited ZnO film by the thermal evaporation technique. The obtained ZnO and ZnO/CdS bilayer films were characterized by x-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The ZnO/CdS bilayer film was used in a photoelectrochemical (PEC) cell as a working electrode and a platinum electrode as a counter electrode. The electrolyte solution contained 1M KCl and 0.1M Na2S. The results show that the cell with the ZnO/CdS bilayer electrode had significantly improved photoelectric properties in comparison with that of the pure ZnO thin films. The best thickness of the CdS thin film deposited on ITO/ZnO substrates was around 70 nm. © 2010 Vietnam Academy of Science & Technology.
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