Effect of annealing temperature on dielectric constant and bonding structure of low-k SiCOH thin films deposited by plasma enhanced chemical vapor deposition

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Department of Physics, Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, Korea, Republic of [1 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 2卷 / 536-541期
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932.3 Plasma Physics - 813 Coatings; Finishes and Thin Film Deposition - 804.2 Inorganic Compounds - 802.2 Chemical Reactions - 714.2 Semiconductor Devices and Integrated Circuits - 708.1 Dielectric Materials - 537.1 Heat Treatment Processes;
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