The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

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[1] Demontis, V.
[2] Sanna, C.
[3] Melskens, J.
[4] Santbergen, R.
[5] Smets, A.H.M.
[6] Damiano, A.
[7] Zeman, M.
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Demontis, V. | 1600年 / American Institute of Physics Inc.卷 / 113期
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Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism; we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon oxide (SiOx:H) interlayers with different metals (silver; aluminium; and chromium) in standard p-i-n a-Si:H solar cells. We use a unique inverse modeling approach to show that in most back reflectors the internal metal reflectance is lower than expected theoretically. However; the metal reflectance is increased by the addition of an oxide interlayer. Our experiments demonstrate that SiOx:H forms an interesting alternative interlayer because unlike the more commonly used ZnO:Al it can be deposited by plasma-enhanced chemical vapour deposition and it does not reduce the fill factor. The largest efficiency enhancement is obtained with a double interlayer of SiOx:H and ZnO:Al. © 2013 American Institute of Physics;
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