Si/Ge hole-tunneling double-barrier resonant tunneling diodes formed on sputtered flat Ge layers

被引：0
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作者：
Hanafusa, Hiroaki [1 ]
Hirose, Nobumitsu [2 ]
Kasamatsu, Akifumi [2 ]
Mimura, Takashi [2 ]
Matsui, Toshiaki [2 ]
Chong, Harold M. H. [3 ]
Mizuta, Hiroshi [3 ]
Suda, Yoshiyuki [1 ]
机构：
[1] Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
[2] National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
[3] School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, United Kingdom
来源：
Applied Physics Express | 2011年 / 4卷 / 02期
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摘要：
Resonant tunneling diodes
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