High-temperature growth of Cu2O crystals via mist chemical vapor deposition on Si (111) substrates

被引：0
|
作者：
Sasaki, Togi [1 ]
Kobayashi, Shuto [1 ]
Kouno, Tetsuya [1 ]
机构：
[1] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 12期
关键词：
mist-CVD; Cu2O; crystal growth; THIN-FILMS; LAYERS;
D O I：
10.35848/1347-4065/ad9b60
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cuprous oxide (Cu2O) crystals were grown on Si(111) substrates at a high temperature of approximately 960 degrees C using mist chemical vapor deposition (mist-CVD) by varying the mist carrier gas parameters. The mist-CVD process has a potentially low environmental impact and low cost due to the absence of a vacuum system and the use of low-toxic raw materials. The as-grown crystals were evaluated using X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. Based on these results, the mixture ratio of the mist carrier gas is significant for realizing Cu2O crystal growth.
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页数：3
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