Equivalence of proton-induced displacement damage in InP-based HEMT

Radiation experiments of 560 keV, 2 MeV, and 10 MeV proton have been performed on InP-based High Electron Mobility Transistors (HEMTs), the damage mechanisms and damage equivalence are systematically studied. The irradiated devices have exhibited the reduction of transconductance, the positive shift of threshold voltage, and the reduction in drain-source current. Nonionizing energy loss (NIEL) was calculated to investigate the relationship between the degradation of the device and proton energy, but the damage factors of the devices do not exhibit a perfect linear relationship with NIEL across all the energies. The deviation mainly lies in the stopping power of the target material for incident protons. An improved NIEL calculation method is proposed based on Geant4 simulation software, which eliminates the influence of stopping power. And thus, the equivalence of displacement damage in InP-based HEMTs has been constructed among 560 keV, 2 MeV, and 10 MeV proton irradiation. © 2024