Novel structure for a static induction transistor

被引:0
|
作者
Tang, Ying [1 ]
Liu, Su [1 ]
Li, Siyuan [1 ]
Wu, Rong [2 ]
Chang, Peng [1 ]
机构
[1] Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
[2] School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China
关键词
Transistors;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:918 / 922
相关论文
共 50 条
  • [1] Electrical performance of static induction transistor with transverse structure
    Chunjuan LIU
    Yongshun WANG
    Zaixing WANG
    Chao CHEN
    ScienceChina(InformationSciences), 2017, 60 (02) : 188 - 195
  • [2] Electrical performance of static induction transistor with transverse structure
    Liu, Chunjuan
    Wang, Yongshun
    Wang, Zaixing
    Chen, Chao
    SCIENCE CHINA-INFORMATION SCIENCES, 2017, 60 (02)
  • [3] STATIC INDUCTION TRANSISTOR LOGIC
    NISHIZAWA, J
    NONAKA, T
    MOCHIDA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 279 - 282
  • [4] STATIC INDUCTION TRANSISTOR.
    Nishizawa, Jun-ichi
    Japan Annual Reviews in Electronics, Computers & Telecommunications, 1982, 1 : 201 - 219
  • [5] STATIC INDUCTION TRANSISTOR LOGIC
    NISHIZAWA, J
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 231 - 239
  • [6] Microwave static induction transistor
    Nishizawa, J
    Plotka, P
    PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 528 - 535
  • [7] STATIC INDUCTION TRANSISTOR MEMORY
    NISHIZAWA, J
    TAMAMUSHI, T
    OHMI, T
    NONAKA, T
    MOCHIDA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 273 - 277
  • [8] CURRENT AMPLIFICATION IN NONHOMOGENEOUS-BASE STRUCTURE AND STATIC INDUCTION TRANSISTOR STRUCTURE
    NISHIZAWA, J
    NONAKA, K
    TAMAMUSHI, T
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4783 - 4797
  • [9] Electrical characteristics of a novel gate structure 4H-SiC power static induction transistor
    Iwasaki, T
    Oono, T
    Asano, K
    Sugawara, Y
    Yatsuo, T
    ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 1997, : 149 - 152
  • [10] Electrical characteristics of a novel gate structure 4H-SiC power static induction transistor
    Hitachi Ltd, Ibaraki-ken, Japan
    Mater Sci Forum, pt 2 (1085-1088):