Computer simulation of Nb-doping PbWO4 crystal

被引:0
|
作者
College of Science, University of Shanghai for Science and Technology, Shanghai 200093, China [1 ]
机构
来源
Shanghai Ligong Daxue Xuebao | 2006年 / 6卷 / 511-514期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Computer simulation of Nb-doping PBWO4 crystal
    Chen, Teng
    Liu, Tingyu
    Zhang, Qiren
    Lii, Fangfei
    Tian, Dongsheng
    Zhang, Xiuyan
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 575 (03): : 390 - 394
  • [2] Growth and uniformity improvement of PbWO4 crystal with yttrium doping
    Mao, RH
    Chen, JM
    Shen, DZ
    Yin, ZW
    JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) : 518 - 524
  • [3] Doping mechanism of antinomy in PbWO4
    Li, WS
    Tang, TB
    Feng, XQ
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) : 136 - 139
  • [4] Doping mechanism of antinomy in PbWO4
    Li, Wensheng
    Tang, Tong B.
    Feng, Xiqi
    1600, American Institute of Physics Inc. (91):
  • [5] CRYSTAL STRUCTURE OF PBWO4
    PLAKHOV, GF
    POBEDIMS.EA
    SIMONOV, MA
    BELOV, NV
    SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1971, 15 (05): : 928 - &
  • [6] Influence in the absorption spectrum of PbWO4 crystal by K+ doping
    Zhang, FW
    Zhang, QR
    Sun, YY
    Tao, K
    PHYSICA B-CONDENSED MATTER, 2005, 355 (1-4) : 427 - 431
  • [7] Study on the doping mechanism and electronic structure for Nb5+ doping PbWO4 crystals
    Chen, Teng
    Xu, Kaiyu
    Shi, Dongli
    Wang, Mingjie
    Liu, Tingyu
    CURRENT APPLIED PHYSICS, 2010, 10 (01) : 351 - 354
  • [8] Computer simulation study of extrinsic defects in PbWO4 crystals
    Lin, QS
    Feng, XQ
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (12) : 1963 - 1973
  • [9] Simulation study of the defect models of Cr-doped PbWO4 crystal and Cr, La-co-doped PbWO4 crystal
    Xie, Rangmian
    Zhang, Qiren
    JOURNAL OF ALLOYS AND COMPOUNDS, 2007, 439 (1-2) : 326 - 329
  • [10] Superstructure in PbWO4: La crystal
    Lin, QS
    Feng, XQ
    FERROELECTRICS, 2001, 251 (1-4) : 85 - 91