Improved on-state resistance with reliable reverse characteristics in 1.2 kV 4H-SiC MOSFET by selective nitrogen implantation assisted current spreading layer

被引：0
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作者：
Jang, Seung Yup [1 ]
Kim, Jaemoo [1 ]
Lee, Hojung [1 ]
Kim, Kyu Sang [2 ]
机构：
[1] Power Semiconductor Part, Mixed IP and Device Team, System IC Center, LG Electronics, Seoul,06772, Korea, Republic of
[2] Dept. of Applied Physics and Electronics, Sangji University, Wonju, Gangwon,26339, Korea, Republic of
来源：
Japanese Journal of Applied Physics | / 4卷
关键词：
712.1 Semiconducting Materials - 712.1.2 Compound Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 804 Chemical Products Generally - 804.2 Inorganic Compounds;
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学科分类号：
摘要：
MOSFET devices
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