Room temperature rectifying characteristics of epitaxial Y 1Ba2Cu3-xZnxO7-δ (x=0.0,0.2) and Nb:SrTiO3 (Nb: 0.05%, 0.1%, 0.5%) heterojunctions

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作者：
Ramadan, W. [1 ]
Ogale, S.B. [1 ]
Dhar, S. [1 ]
Fu, L.F. [1 ]
Browning, N.D. [1 ]
Venkatesan, T. [1 ]
机构：
[1] Center for Superconductivity Research, Department of Physics, University of Mryland, College Park, MD 20742-4111
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Journal of Applied Physics | 1600年 / 99卷 / 04期
关键词：
We report on the fabrication and electrical characterization of epitaxial metal-semiconductor junctions between Y1 Ba2 Cu3 O7-δ (YBCO) (optimally doped and Zn doped) and (001) Nb:SrTi O3 with different Nb concentrations (0.05%; 0.1%; and 0.5%). The current-voltage characteristics of such epitaxial junctions are nonlinear and rectifying; and these are dramatically enhanced with decreasing Nb concentration and Zn doping. Indeed; for the case of 0.05% Nb:STO; reverse breakdown voltage as high as -18 V (-28 V) is realized for optimally doped (Zn doped) YBCO. These data are analyzed within the framework of thermionic emissiondiffusion models for Schottky and metal-insulator- semiconductor-type junctions. © 2006 American Institute of Physics;
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