Preparation and photoelectric characteristics of high speed superluminescent diode emitting at 1053 nm

被引：0
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作者：
State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing [1 ]
400044, China
不详 [2 ]
401331, China
不详 [3 ]
400060, China
不详 [4 ]
401331, China
机构：
来源：
Hongwai Yu Haomibo Xuebao | / 2卷 / 218-223期
关键词：
1053 nm - Crystal qualities - Epitaxial materials - Modulation bandwidth - Photoelectric characteristics - Ridge waveguide structures - Spectral modulation - Superluminescent diode;
D O I：
10.11972/j.issn.1001-9014.2015.02.016
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学科分类号：
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