Fabrication of ultra-flat c-axis oriented ZnO thin films on atomically stepped cyclo-olefin polymer (COP) substrates by pulsed laser deposition at RT

被引：1

作者：

Oga T. ^{[1
]}

Yamada S. ^{[1
]}

Kaneko N. ^{[1
]}

Kaneko S. ^{[1
,2
]}

Matsuda A. ^{[1
]}

Yoshimoto M. ^{[1
]}

机构：

[1] Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama

[2] Kanagawa Institute of Industrial Science and Technology, 705-1 Shimoimaizumi, Ebina, Kanagawa

来源：

Oga, Tomoaki (oga.t.ab@m.titech.ac.jp) | 1600年 / IOP Publishing Ltd卷 / 59期

关键词：

Fabrication - Metallic films - Pulsed lasers - Thin films - Polymer films - II-VI semiconductors - Zinc oxide - Morphology - Optical films - Substrates - Sapphire - Surface morphology;

D O I：

10.35848/1347-4065/abc65e

中图分类号：

学科分类号：

摘要：

Highly crystalline c-axis oriented ZnO thin films with ultra-flat surfaces were fabricated by pulsed laser deposition at RT on 0.3 nm high atomically stepped cyclo-olefin polymer (COP) substrates whose surfaces were thermally nanoimprinted using atomically stepped sapphire molds. X-ray diffraction and atomic force microscopy measurements showed that the atomically-controlled surfaces of COP substrates enhanced the c-axis orientation and surface flatness of the crystalline ZnO thin films. The ZnO thin films grown on the atomically stepped COP substrates exhibited atomically stepped surface morphology, and also the optical bandgap of about 3.3 eV and RT resistivity of 5.0 × 10−2 Ω cm. © 2020 The Japan Society of Applied Physics

引用

共 35 条

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[35] Gas sensing properties of c-axis-oriented Al-incorporated ZnO films epitaxially grown on (11(2)over-bar0) sapphire substrates using pulsed laser deposition
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