Thermal rectification (TR) has attracted significant research interest due to its potential to achieve active heat control in various nanoscale applications. In this study, we propose a novel graphene-based thermal rectifier under a strain gradient. Two kinds of strain gradients, namely, compressive and tensile, are considered. We observe that under a compressive strain gradient (CSGG), the heat flows preferentially from the high-compressed region to the lower, with a significant TR of 120%. But for a tensile strain gradient (TSGG), the direction of TR is dependent on its length. For a smaller system, the TR occurs from the high-strained to low-strained region, while for larger systems, the direction of TR is reversed. The strength and location of the standing wave in conjunction with the mismatch in the overlap of the density of states in forward and reverse bias are found to induce TR in TSGG and CSGG. The TR direction is observed to be altered by changing the location of the strain gradient. Additionally, we propose a series thermal rectifier by coupling graphene under strain gradient to asymmetric defective graphene (ADG). A significant increase in the series thermal rectifier is observed when compared to TR in ADG. Our results demonstrate the applicability of strain gradient as a feasible approach to control the thermal rectification ratio and its direction for various applications such as phononic devices and thermal logic circuits.
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Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea
Sejong Univ, HMC, Seoul 05006, South KoreaUniv Manchester, Dept Phys & Astron, Manchester M13 9PL, England
Kim, Minwook
Suleman, Muhammad
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Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea
Sejong Univ, HMC, Seoul 05006, South KoreaUniv Manchester, Dept Phys & Astron, Manchester M13 9PL, England
Suleman, Muhammad
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Nasir, Naila
Park, Hyun Min
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Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea
Sejong Univ, HMC, Seoul 05006, South KoreaUniv Manchester, Dept Phys & Astron, Manchester M13 9PL, England
Park, Hyun Min
Lee, Sohee
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Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea
Sejong Univ, HMC, Seoul 05006, South KoreaUniv Manchester, Dept Phys & Astron, Manchester M13 9PL, England
Lee, Sohee
Elahi, Ehsan
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Sejong Univ, Dept Phys & Astron, Seoul 05006, South KoreaUniv Manchester, Dept Phys & Astron, Manchester M13 9PL, England
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China Univ Petr, Dept Energy & Power Engn, Qingdao 266580, Peoples R ChinaChina Univ Petr, Dept Energy & Power Engn, Qingdao 266580, Peoples R China
Chen, Guofu
Bao, Wenlong
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China Univ Petr, Dept Energy & Power Engn, Qingdao 266580, Peoples R ChinaChina Univ Petr, Dept Energy & Power Engn, Qingdao 266580, Peoples R China
Bao, Wenlong
Chen, Jiao
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China Univ Petr, Dept Energy & Power Engn, Qingdao 266580, Peoples R ChinaChina Univ Petr, Dept Energy & Power Engn, Qingdao 266580, Peoples R China
Chen, Jiao
Wang, Zhaoliang
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China Univ Petr, Dept Energy & Power Engn, Qingdao 266580, Peoples R ChinaChina Univ Petr, Dept Energy & Power Engn, Qingdao 266580, Peoples R China
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Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaBeijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
Meng, Lan
Su, Ying
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Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaBeijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
Su, Ying
Geng, Dechao
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Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R ChinaBeijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
Geng, Dechao
Yu, Gui
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Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R ChinaBeijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
Yu, Gui
Liu, Yunqi
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Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R ChinaBeijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
Liu, Yunqi
Dou, Rui-Fen
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Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaBeijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
Dou, Rui-Fen
Nie, Jia-Cai
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Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaBeijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
Nie, Jia-Cai
He, Lin
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Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaBeijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
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Univ Oklahoma, Ctr Semicond Phys Nanostruct, Homer L Dodge Dept Phys & Astron, Norman, OK 73069 USAUniv Oklahoma, Ctr Semicond Phys Nanostruct, Homer L Dodge Dept Phys & Astron, Norman, OK 73069 USA
Gunawardana, K. G. S. H.
Mullen, Kieran
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Univ Oklahoma, Ctr Semicond Phys Nanostruct, Homer L Dodge Dept Phys & Astron, Norman, OK 73069 USAUniv Oklahoma, Ctr Semicond Phys Nanostruct, Homer L Dodge Dept Phys & Astron, Norman, OK 73069 USA
Mullen, Kieran
Hu, Jiuning
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Purdue Univ, Birk Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAUniv Oklahoma, Ctr Semicond Phys Nanostruct, Homer L Dodge Dept Phys & Astron, Norman, OK 73069 USA
Hu, Jiuning
Chen, Yong P.
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Purdue Univ, Birk Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USAUniv Oklahoma, Ctr Semicond Phys Nanostruct, Homer L Dodge Dept Phys & Astron, Norman, OK 73069 USA
Chen, Yong P.
Ruan, Xiulin
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Purdue Univ, Birk Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USAUniv Oklahoma, Ctr Semicond Phys Nanostruct, Homer L Dodge Dept Phys & Astron, Norman, OK 73069 USA