4H-SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode

In this letter, we propose an improved 4H-SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode (ITSBD-MOS). The device features an Inverted-T groove beneath the gate electrode and the integrated SBD locates on the bottom of source trench. Numerical simulations have been completed to study the proposed device. The maximum electric field in gate oxide of ITSBD-MOS is suppressed to below 3 MV/cm, while the turn-on voltage in reverse conduction state is lowered to 1.23 V. Besides, due to the introduction of Inverted-T groove, the gate-to-drain charge of the ITSBD-MOS is significantly reduced while the shortcircuit capability is obviously improved. The calculated high-frequency figure of merit (HFFOM = R on,sp x Q gd ) of ITSBD-MOS is tremendously decreased compared with that of DT-MOS, which suggests that ITSBD-MOS is a promising candidate for external-diode free power electronics applications and high-frequency operations.