Highly reflective GaN-based air-gap distributed bragg reflectors fabricated using AlinN wet etching

被引:0
|
作者
Sharp Laboratories of Europe Ltd., Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, United Kingdom [1 ]
不详 [2 ]
机构
来源
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
Distributed Bragg reflectors
引用
收藏
相关论文
共 50 条
  • [1] Highly Reflective GaN-Based Air-Gap Distributed Bragg Reflectors Fabricated Using AlInN Wet Etching
    Bellanger, Mathieu
    Bousquet, Valerie
    Christmann, Gabriel
    Baumberg, Jeremy
    Kauer, Matthias
    APPLIED PHYSICS EXPRESS, 2009, 2 (12)
  • [2] High-reflectivity GaN/air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AlInN layers
    Xiong, C.
    Edwards, P. R.
    Christmann, G.
    Gu, E.
    Dawson, M. D.
    Baumberg, J. J.
    Martin, R. W.
    Watson, I. M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (03)
  • [3] Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
    Sharma, R
    Haberer, ED
    Meier, C
    Hu, EL
    Nakamura, S
    APPLIED PHYSICS LETTERS, 2005, 87 (05)
  • [4] Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
    Seneza, Cleophace
    Berger, Christoph
    Sana, Prabha
    Witte, Harmut
    Blasing, Jurgen
    Dempewolf, Anja
    Dadgar, Armin
    Christen, Jurgen
    Strittmatter, Andre
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (01)
  • [5] GaN-based vertical cavities on highly reflective and crack-free nitride distributed Bragg reflectors
    Ni, X.
    Shimada, R.
    Kang, T. D.
    Leach, J. H.
    Ozgur, U.
    Morkoc, H.
    GALLIUM NITRIDE MATERIALS AND DEVICES IV, 2009, 7216
  • [6] Micromachined tunable filter based on InP/air-gap distributed Bragg reflectors
    Hou, Shi-Hua
    Sun, Jie
    Mao, Rong-Wei
    Wu, Xu-Ming
    Ma, Xiao-Yu
    Tan, Man-Qing
    Chen, Liang-Hui
    Bandaoti Guangdian/Semiconductor Optoelectronics, 2006, 27 (05): : 543 - 546
  • [7] High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers
    Altoukhov, Alexei
    Levrat, Jacques
    Feltin, Eric
    Carlin, Jean-Francois
    Castiglia, Antonino
    Butte, Raphael
    Grandjean, Nicolas
    APPLIED PHYSICS LETTERS, 2009, 95 (19)
  • [8] 1.55 μm VCSELs with InP/air-gap distributed bragg reflectors
    Strassner, M
    Regreny, P
    Bouchoule, S
    Chitica, N
    Saint-Girons, G
    Sagnes, I
    Jacquet, J
    Leclercq, JL
    2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, : 700 - 703
  • [9] High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors
    Ryu, Jae Hyoung
    Kim, Hee Yun
    Kim, Hyun Kyu
    Katharria, Yashpal Singh
    Han, Nam
    Kang, Ji Hye
    Park, Young Jae
    Han, Min
    Ryu, Beo Deul
    Ko, Kang Bok
    Suh, Eun-Kyoung
    Hong, Chang-Hee
    OPTICS EXPRESS, 2012, 20 (09):
  • [10] GaN microcavity structure with dielectric distributed Bragg reflectors fabricated by using a wet-chemical etching of a (111) Si substrate
    Kim, T. K.
    Yang, S. S.
    Son, J. K.
    Hong, Y. G.
    Yang, G. M.
    APPLIED PHYSICS LETTERS, 2006, 89 (04)