Preparation of hydrogen-containing Ta2O5 thin films by reactive sputtering using O2 + H2O mixed gas

被引：0
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作者：
Abe, Yoshio [1 ]
Itadani, Naruhiro [1 ]
Kawamura, Midori [1 ]
Sasaki, Katsutaka [1 ]
Itoh, Hidenobu [1 ]
机构：
[1] Department of Materials Science, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1600年 / 46卷 / 02期
关键词：
Hydrogen-containing tantalum oxide (Ta2O5) thin films are considered to be a candidate for proton-conducting solid-oxide electrolytes. Hydrogen-containing Ta2O5 thin films were prepared by reactively sputtering a Ta metal target in O2 + H 2O mixed gas. The effects of the H2O flow ratio and sputtering power on the hydrogen content in the films were studied by Fourier transform infrared spectroscopy (FTIR) and secondary ion mass spectrometry (SIMS). The hydrogen content in the films deposited in O2 + H 2O mixed gas was approximately three times as large as that deposited in O2 gas; and a maximum hydrogen content of 3.5 × 10 21 atoms/cm3 was obtained. © 2007 The Japan Society of Applied Physics;
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页码：777 / 779
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