Highly thermal immune nitrogen-doped Ni-germanosilicide with Co/TiN double layer for nano-scale complementary metal oxide semiconductor applications

被引：0
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作者：
Oh, Soon-Young [1 ]
Yun, Jang-Gn [1 ]
Kim, Yong-Jin [1 ]
Lee, Won-Jae [1 ]
Ji, Hee-Hwan [1 ]
Tuya, Agchbayar [1 ]
Kim, Do-Woo [1 ]
Cha, Han-Seob [2 ]
Cho, Yoo-Jeong [3 ]
Han, Kil-Jin [3 ]
Kim, Yeong-Cheul [3 ]
Wang, Jin-Suk [1 ]
Lee, Hi-Deok [1 ]
机构：
[1] Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea, Republic of
[2] R and D Center, MagnaChip Semiconductor Ltd., Cheongju, Choongbuk 361-725, Korea, Republic of
[3] Department of Materials Engineering, Korea University of Technology and Education, Chungnam 330-708, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 B期
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Journal article (JA)
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页码：2980 / 2983
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