Simulation of phase-change random access memory with ring-type contactor for low reset current by finite element modelling

被引：8
|
作者：
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China [1 ]
不详 [2 ]
机构：
来源：
Chin. Phys. Lett. | 2008年 / 9卷 / 3455-3458期
关键词：
Phase change materials;
D O I：
10.1088/0256-307X/25/9/097
中图分类号：
学科分类号：
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