Correlation between deep level traps and reverse recovery of GaAs p-i-n diodes before and after neutron irradiation

被引：0
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作者：
Sobolev, M.M. [1 ]
Soldatenkov, F.Y. [1 ]
Kozlov, V.A. [1 ]
机构：
[1] Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg,194021, Russia
来源：
Japanese Journal of Applied Physics | 2023年 / 62卷 / 10期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
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学科分类号：
摘要：
Carrier lifetime - Deep level transient spectroscopy - Defects - Gallium arsenide - III-V semiconductors - Neutron irradiation - Neutrons - Recovery - Semiconducting gallium
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