Electromigration enhanced growth kinetics of intermetallics at the Cu/Al interface

被引:0
|
作者
Shao, Junqi [1 ]
Deng, Shenghua [1 ]
Zhao, Hongjin [1 ]
Lou, Lihao [1 ]
Shi, Baosen [1 ]
Chen, Lvzhou [1 ]
Xu, Liang [2 ]
机构
[1] Faculty of Materials Metallurgy and Chemistry, Jiangxi University of Science and Technology, Ganzhou,341000, China
[2] Ganzhou Tengyuan Cobalt New Material Co., Ltd, Ganzhou,341000, China
关键词
Intermetallics;
D O I
暂无
中图分类号
学科分类号
摘要
The growth kinetic behaviors of the Cu/Al system under current were investigated. The current was shown to significantly promote the growth of the intermetallic (IMC) layer. The growth rate constant of the Al4Cu9 layer under current was approximately 3.26 times higher than that processed without current. Moreover, the current direction leads to a significant difference in the growth rate of the IMC layer, which was attributed to the electromigration effect. Based on the traditional thermal-activated theory and electromigration theory, an electromigration and thermal dual-activated growth kinetic model incorporating the contributions of Joule heat and the nonthermal effect was constructed. The growth kinetic behaviors of the Al4Cu9 layer were investigated by applying this model. The calculated growth activation energies under different current densities were almost constant and close to 130 kJ/mol. The experimental data were applied to verify the model, and the results showed that the model was in good agreement with the experimental results. © 2023 Elsevier Ltd
引用
收藏
相关论文
共 50 条
  • [1] Electromigration enhanced growth kinetics of intermetallics at the Cu/ Al interface
    Shao, Junqi
    Deng, Shenghua
    Zhao, Hongjin
    Lou, Lihao
    Shi, Baosen
    Chen, Lvzhou
    Xu, Liang
    INTERMETALLICS, 2024, 164
  • [2] Kinetics of growth of intermetallics in the Cu-Sn system
    Gupta, SP
    Rathor, D
    ZEITSCHRIFT FUR METALLKUNDE, 2002, 93 (06): : 516 - 522
  • [3] ELECTROMIGRATION IN AL(CU) 2-LEVEL STRUCTURES - EFFECT OF CU AND KINETICS OF DAMAGE FORMATION
    HU, CK
    SMALL, MB
    HO, PS
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) : 969 - 978
  • [4] Kinetics of interface reaction and intermetallics growth of Sn-3.5Ag-0.7Cu/Au/Ni/Cu system under isothermal aging
    X. Q. Shi
    H. F. Kwan
    S. M. L. Nai
    G. H. Lim
    Journal of Materials Science, 2004, 39 : 1095 - 1099
  • [5] Kinetics of interface reaction and intermetallics growth of Sn-3.5Ag-0.7Cu/Au/Ni/Cu system under isothermal aging
    Shi, XQ
    Kwan, HF
    Nai, SML
    Lim, GH
    JOURNAL OF MATERIALS SCIENCE, 2004, 39 (03) : 1095 - 1099
  • [6] Electromigration Extrusion Kinetics of Cu Interconnects
    Zhang, Lijuan
    Wang, Ping-Chuan
    Liu, Xiao Hu
    McLaughlin, Paul S.
    Filippi, Ronald
    Li, Baozhen
    Bao, Junjing
    2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013,
  • [7] THE GROWTH OF CU-SN INTERMETALLICS AT A PRETINNED COPPER-SOLDER INTERFACE
    SUNWOO, AJ
    MORRIS, JW
    LUCEY, GK
    METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1992, 23 (04): : 1323 - 1332
  • [9] Growth kinetics of Cu (Al) solid solution in Al/Cu diffusion couples
    Hannech, EB
    Lamoudi, N
    Gasmi, A
    SURFACE REVIEW AND LETTERS, 2004, 11 (03) : 337 - 340
  • [10] Electromigration in Cu-Al films
    Ojha, VN
    Bandyopadhyay, AK
    Suri, DK
    Kataria, ND
    SEMICONDUCTOR DEVICES, 1996, 2733 : 391 - 393