Measurement of residual stress in single-crystal SiC by X-ray diffraction method

被引:0
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作者
Deng, Ya [1 ]
Zhang, Yumin [1 ]
Zhou, Yufeng [1 ]
机构
[1] Science and Technology on Advanced Composites in Special Environments Laboratory, Center for Composite Material and Structure, Harbin Institute of Technology, Harbin,150080, China
关键词
Crystal planes - Crystal qualities - Measurements of - Multiple regression analysis - Performance and reliabilities - Residual stress state - Single crystal wafers - Single-crystal materials - Stress calculations - X-ray diffraction method;
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页码:147 / 153
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