The influence of ultrafast laser processing on morphology and optical properties of Au-GaAs composite structure

被引:1
|
作者
Dmytruk, I. M. [1 ,3 ]
Berezovska, N. I. [1 ]
Hrabovskyi, Ye. S. [1 ]
Pundyk, I. P. [1 ]
Mamykin, S. V. [1 ,2 ]
Romanyuk, V. R. [2 ]
Dmytruk, A. M. [3 ]
机构
[1] Taras Shevchenko Natl Univ Kyiv, 64-13 Volodymyrska Str, UA-01601 Kyiv, Ukraine
[2] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03028 Kiev, Ukraine
[3] Natl Acad Sci Ukraine, Inst Phys, 46 Prospect Nauky, UA-03028 Kiev, Ukraine
关键词
laser-induced periodic surface structures; femtosecond laser pulses; gallium arsenide; metal-semiconductor metasurface; Raman scattering; photoluminescence; RAMAN; FABRICATION; SURFACE;
D O I
10.15407/spqeo27.03.261
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The results of direct femtosecond laser structuring of GaAs wafer coated with continuous semitransparent gold (Au) film are presented. The obtained structures demonstrate a combination of different features, namely laser-induced periodic surface structures (LIPSS) on semiconductor and metal film, nanoparticles, Au islands, and fragments of exfoliated Au film. The properties of Au-GaAs samples are studied with scanning electron microscopy (SEM), Raman scattering, and photoluminescence (PL) spectroscopy. The behaviour of phonon modes and enhancement of band-edge PL of Au- GaAs composite sample are discussed. The Raman spectra of Au-GaAs sample processed at different levels of irradiation pulse energy reveal forbidden TO and allowed LO phonon modes for selected geometry of experiment, as well as the manifestation of GaAs surface oxidation and amorphization. A 12-fold increase of PL intensity for Au-GaAs sample with LIPSS compared to initial GaAs surface is observed. The detected PL enhancement is caused by an increase of absorption in GaAs due to the light field enhancement near the Au nanoislands and a decrease of nonradiative surface recombination. The blue shift of PL band is caused by the quantum size effect in GaAs nano-sized features at laser processed surface. The combination of GaAs substrate with surface micro- and nanostructures with Au nanoparticles can be useful for photovoltaic and sensorics applications.
引用
收藏
页码:261 / 268
页数:8
相关论文
共 50 条
  • [1] Influence of Finishing the Surface of GaAs on the Properties of Au-GaAs Interfaces
    Bryantseva, T. A.
    Gulyaev, Yu, V
    Lyubchenko, V. E.
    Markov, I. A.
    Ten, Yu A.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2021, 66 (11) : 1289 - 1295
  • [2] Formation, geometric and electronic properties of microrelief Au-GaAs interfaces
    Dmitruk, NL
    Mamykin, SV
    Rengevych, OV
    APPLIED SURFACE SCIENCE, 2000, 166 (1-4) : 97 - 102
  • [3] INFLUENCE OF INTERFACE STATES ON THE CHARACTERISTICS OF REHEATED AU-GAAS CONTACTS
    BARRET, C
    CHEKIR, F
    VAPAILLE, A
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1985, 40 (226): : 129 - 136
  • [4] Structural Characteristics of Au-GaAs Nanostructures for Increased Plasmonic Optical Enhancement
    Abbey, Grant P.
    Nusir, Ahmad I.
    Manasreh, Omar
    Herzog, Joseph B.
    QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XIII, 2016, 9758
  • [5] STRUCTURE STUDY OF AU-GAAS(001) INTERFACES BY HEIS, XPS, AND RHEED
    NARUSAWA, T
    WATANABE, N
    KOBAYASHI, KLI
    NAKASHIMA, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 538 - 541
  • [6] Optical and electronic characterization of transition layer in thin film Au-GaAs Schottky barrier
    Dmitruk, NL
    Borkovskaya, OY
    Fursenko, OV
    VACUUM, 1998, 50 (3-4) : 439 - 443
  • [7] Growth, morphology and optical properties of metal clusters on semiconductor surface (Au/GaAs)
    Dmitruk, N
    Barlas, T
    Dmitruk, I
    Mikhailik, T
    Romaniuk, V
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 393 - 394
  • [8] Ultrafast imaging of phase reaction dynamics in Au-GaAs nanowires using 4D electron microscopy
    Chen, Bin
    Cao, Zetan
    He, Jia
    Liu, Zhiwen
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2018, 256
  • [10] INFLUENCE OF ANNEALING ON FERMI-LEVEL PINNING AND CURRENT TRANSPORT AT AU-SI AND AU-GAAS INTERFACES
    CHEN, TP
    LIU, YC
    FUNG, S
    BELING, CD
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (12) : 6724 - 6726