A ferroelectric capacitor with an asymmetric double-layered ferroelectric structure comprising a liquid-delivery MOCVD Pb(Zr, Ti)O3 layer and a sputter-deposited La-doped Pb(Zr, Ti)O3 for highly reliable FeRAM

We have developed a double-layered ferroelectric capacitor comprising a liquid-delivery metal-organic chemical vapor deposition-based Pb(Zr, Ti)O-3 (PZT) lower layer and a sputter-deposited La-doped Pb(Zr, Ti)O-3 (PLZT) upper layer. This structure is designed to achieve a large polarization in the stacked-type capacitor of FeRAM. Ferroelectric capacitors with noble metal electrodes, which are patterned by sputter-etching due to the difficulty of standard chemical reactive etching typically exhibit sloped sidewalls. Consequently, their polarization values, determined by the actual capacitor area, depend on their geometric shape. Our developed capacitor exhibits a 35% increase in polarization compared to an all-sputter-deposited PLZT capacitor. This improvement is due to the reduced total thickness of the developed capacitor achieved by simplifying the bottom electrode structure, which results in steeper capacitor sidewalls. Furthermore, our developed capacitor demonstrates excellent retention margin even after 3000 h of baking at 150 degrees C, and with a potential endurance of 10(14) cycles as predicted by voltage acceleration measurements.