A fin-gate p-GaN HEMT with high threshold voltage and improved dynamic performance

被引：0
|
作者：
Shen, Lingyan [1 ]
Zhou, Xuetong [1 ]
Zheng, Li [1 ]
Cheng, Xinhong [1 ,2 ]
机构：
[1] The State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai,200050, China
[2] The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing,100049, China
来源：
Microelectronics Journal | 2024年 / 153卷
关键词：
D O I：
10.1016/j.mejo.2024.106442
中图分类号：
学科分类号：
摘要：
Gallium nitride
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