Coupling control in the few-electron regime of quantum dot arrays using 2-metal gate levels in CMOS technology

被引：0

作者：

Paz, B. Cardoso ^{[1
]}

El-Homsy, V. ^{[1
]}

Niegemann, D.J. ^{[1
]}

Klemt, B. ^{[1
]}

Chanrion, E. ^{[1
]}

Thiney, V. ^{[2
]}

Jadot, B. ^{[2
]}

Mortemousque, P.A. ^{[2
]}

Bertrand, B. ^{[2
]}

Bedecarrats, T. ^{[2
]}

Niebojewski, H. ^{[2
]}

Perruchot, F. ^{[2
]}

De Franceschi, S. ^{[3
]}

Vinet, M. ^{[2
]}

Urdampilleta, M. ^{[1
]}

Meunier, T. ^{[1
]}

机构：

[1] Institut Neel, Universite Grenoble Alpes, Grenoble, France

[2] CEA-Leti, Universite Grenoble Alpes, Grenoble, France

[3] CEA-IRIG, Universite Grenoble Alpes, Grenoble, France

来源：

ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings | 2022年

关键词：

Number:; -; Acronym:; ERC; Sponsor: European Research Council; 951852; H2020; Sponsor: Horizon 2020 Framework Programme;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Qubits

引用

页码：45 / 48

共 18 条

[1] Coupling control in the few-electron regime of quantum dot arrays using 2-metal gate levels in CMOS technology
Paz, B. Cardoso
El-Homsy, V.
Niegemann, D. J.
Klemt, B.
Chanrion, E.
Thiney, V.
Jadot, B.
Mortemousque, P. A.
Bertrand, B.
Bedecarrats, T.
Niebojewski, H.
Perruchot, F.
De Franceschi, S.
Vinet, M.
Urdampilleta, M.
Meunier, T.
ESSCIRC 2022- IEEE 48TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC), 2022, : 45 - 48
[2] DESIGN OF GATE-CONFINED QUANTUM-DOT STRUCTURES IN THE FEW-ELECTRON REGIME
CHEN, MH
POROD, W
JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) : 1050 - 1057
[3] Charge States and Transition of Double Quantum Dot in the Few-Electron Regime
Zhou Cheng
Wang Li
Tu Tao
Han Tian-Yi
Li Hai-Ou
Guo Guo-Ping
CHINESE PHYSICS LETTERS, 2013, 30 (05)
[4] Manipulation of exchange coupling energy in a few-electron double quantum dot
Hatano, T.
Amaha, S.
Kubo, T.
Tokura, Y.
Nishi, Y.
Hirayama, Y.
Tarucha, S.
PHYSICAL REVIEW B, 2008, 77 (24):
[5] Intermediate low spin states in a few-electron quantum dot in the ν ≤ 1 regime
Nishi, Y.
Maksym, P. A.
Austing, D. G.
Hatano, T.
Kouwenhoven, L. P.
Aoki, H.
Tarucha, S.
PHYSICAL REVIEW B, 2006, 74 (03)
[6] Few-electron physics in a nanotube quantum dot with spin-orbit coupling
Wunsch, B.
PHYSICAL REVIEW B, 2009, 79 (23):
[7] A few-electron vertical In0.56Ga0.44As quantum dot with an insulating gate
Kita, T.
Chiba, D.
Ohno, Y.
Ohno, H.
APPLIED PHYSICS LETTERS, 2007, 91 (23)
[8] Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate Sensors
Colless, J. I.
Mahoney, A. C.
Hornibrook, J. M.
Doherty, A. C.
Lu, H.
Gossard, A. C.
Reilly, D. J.
PHYSICAL REVIEW LETTERS, 2013, 110 (04)
[9] Effective tuning methods for few-electron regime in gate-defined quantum dots
Yang, Chanuk
Jung, Hwanchul
Choi, Hyung Kook
Chung, Yunchul
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2025, 86 (02) : 106 - 112
[10] Single-electron charging and detection in a laterally coupled quantum-dot circuit in the few-electron regime
Zhang, LX
Matagne, P
Leburton, JP
Hanson, R
Kouwenhoven, LP
PHYSICAL REVIEW B, 2004, 69 (24) : 245301 - 1

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