Study on the uniaxial tensile mechanical behavior of twodimensional single-crystal aluminum nitride

被引:0
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作者
He, Yan [1 ]
Wang, Kaiyuan [1 ]
Tang, Meiling [1 ]
Fan, Lin [1 ]
Sun, Jingting [1 ]
Gao, Xingjun [1 ]
机构
[1] School of Mechanical Engineering, Liaoning Petrochemical University, Fushun,113001, China
关键词
Aluminum nitride - Crack propagation - Crystal lattices - Crystal orientation - Fracture energy - Fracture toughness - Grain boundaries - Microcracks - Molecular orientation - Strain energy - Strain rate - Stress-strain curves - Tensile strain - Tensile strength;
D O I
10.1088/1402-4896/ad8b76
中图分类号
学科分类号
摘要
To investigate the tensile behavior and mechanical properties of single-crystal aluminum nitride (AlN) at the microscopic level, molecular dynamics simulations were used to study the effects of crystal orientation, strain rate, environmental temperature, and hole defect size on fracture strength, fracture mechanism, and potential energy during uniaxial tensile. The results show that the tensile strength of AlN in the [100] crystal direction is stronger. The anisotropic behavior characteristics of Al-N bonds fracture mechanism, crack growth rate, and cracking degree are significant when stretched along the [100], [010], and [110] crystal directions. Under high temperature condition, the lattice structure undergoes changes, causing grain boundaries to move and slip. This facilitates the breaking of bonds, leading to a decrease in tensile strength and a reduction in stored potential energy. Hole defects cause more lattice damage, reducing the energy required for Al-N bonds breakage and facilitating the propagation of microcracks. Additionally, it was found that the strain rate affects the stress-strain behavior of the model. An increase in strain rate leads to an increase in breaking stress, and the rapid deformation of AlN results in more energy being stored in the lattice in the form of potential energy. Therefore, the tensile strength and potential energy are improved. © 2024 IOP Publishing Ltd. All rights.
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