Preparation and Properties of A Novel Yellow Long Persistent Luminescence Material γ-SrGa2O4∶Bi3+

被引：0

作者：

Wang Y.-J. ^{[1
]}

Wang Z.-Z. ^{[2
]}

Wang Y.-H. ^{[1
]}

机构：

[1] School of Materials and Energy, Lanzhou University, Lanzhou

[2] Baotou Research Institute of Rare Earths, Baotou

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2022年 / 43卷 / 10期

关键词：

information storage; trap; yellow long persistent luminescence; γ-SrGa[!sub]2[!/sub]O[!sub]4[!/sub]∶Bi[!sup]3+[!/sup;

D O I：

10.37188/CJL.20220197

中图分类号：

学科分类号：

摘要：

Deep traps in long persistent luminescence（LPL） materials have excellent energy storage and release properties， and thus have great application advantages in optical information storage. In this paper， a novel yellow long afterglow material γ-SrGa2O4∶Bi3+ was synthesized by high-temperature solid-phase method， and its emission spectrum is a broadband emission centered at 565 nm in the range of 400-800 nm， which is attributed to the 3P1→1S0 transitions of Bi3+. The bright yellow LPL of the γ-SrGa2O4∶Bi3+ sample was observed after UV lamp irradiation. The analysis of the thermoluminescence（TL） curve indicates that there are three main traps in γ-SrGa2O4∶Bi3+ with the depths of 0.678， 0.838， 0.978 eV， respectively. The shallow trap with a depth of 0.678 eV is the main reason for the LPL phenomenon of the material， while the intensity of the TL peak corresponding to the deep trap with a depth of 0.838 eV only decreases by 18.6% after 12 h， which indicates the slow electron release in the deep trap. Based on the deep trap properties of the material， the letter patterns were designed and experimented for optical information storage， and the results showed that the material has potential applications in information storage. © 2022 Chines Academy of Sciences. All rights reserved.

引用

页码：1542 / 1551

页数：9

共 27 条

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