A systematic first-principles quantum analysis of the physical properties of Lead-Free bismuth titanate structures ABi4Ti4O15 (A = Ca, Ba) for low-cost green energy applications

被引:0
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作者
Abbas, Zeesham [1 ]
Usmani, Tooba [2 ]
Shaikh, Shoyebmohamad F. [3 ]
Parveen, Amna [4 ]
Shah, Syed Zuhair Abbas [5 ,6 ]
Al-Enizi, Abdullah M. [3 ]
机构
[1] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea
[2] Govt Coll Technol Women, Dept Related Studies, Sargodha 40100, Punjab, Pakistan
[3] King Saud Univ, Coll Sci, Dept Chem, POB 2455, Riyadh 11451, Saudi Arabia
[4] Gachon Univ, Coll Pharm, 191, Hambakmeoro, Incheon 21936, South Korea
[5] Thal Univ Bhakkar, Dept Phys, Bhakkar 30000, Pakistan
[6] Univ Sargodha, Dept Phys, Sargodha 40100, Pakistan
关键词
First-principles; FP-LAPW; Bismuth Titanates; Optoelectronic Properties; Thermodynamic properties; Transport Properties; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; PHASE-STRUCTURE; CABI4TI4O15; CERAMICS;
D O I
10.1016/j.mseb.2024.117750
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the optoelectronic and thermophysical properties of ABi4Ti4O15 (A = Ba, Ca) using first principles DFT computations. The FP-LAPW technique employed in the WIEN2K code allows for accurate estimation of the ground state parameters of crystalline materials. The phonon spectra, formation energies, and other thermodynamic aspects of these layered perovskite materials indicate that they are thermodynamically stable. The analysis of energy band structures indicates that BaBi4Ti4O15 and CaBi4Ti4O15 are indirect semiconductors with energy band gaps of 1.89 eV and 1.76 eV, respectively.CaBi4Ti4O15 has greater structural stability in comparison to BaBi4Ti4O15.The analysis of optical characteristics reveals that these compounds exhibit high photon absorption in UV region. The static refractive index n(omega) values for BaBi4Ti4O15 and CaBi4Ti4O15 are 1.91 and 1.89, respectively. These values show optical activeness of these compounds since their n(omega) values fall within the range of 1.0 to 2.0. The figure of merit (ZT) values of 1.43 and 1.36 for BaBi4Ti4O15 and CaBi4Ti4O15, respectively, make them highly suitable for thermoelectric device applications.
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页数:15
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