A Method for Manufacturing Photosensitive Elements Based on PtSi

被引：0
|
作者：
Kerimov, E.A. [1 ]
机构：
[1] Azerbaijan State Technical University, Baku, Azerbaijan
来源：
Russian Microelectronics | 2024年 / 53卷 / 04期
关键词：
Carrier concentration - Narrow band gap semiconductors - Photodetectors - Semiconducting indium phosphide - Silicon detectors - Silicon wafers;
D O I：
10.1134/S1063739724600419
中图分类号：
学科分类号：
摘要：
Abstract: Diodes with a Schottky barrier based on a PtSi-Si contact can be used as detectors for detecting radiation in the IR region of the spectrum. However, the quantum efficiency of such detectors is very low compared to photodetectors based on narrow-gap semiconductors and p–n junctions. To increase the quantum efficiency, Schottky receivers are manufactured, as will be shown below, in the form of the so-called optical cavity, and the PtSi thickness should not exceed 100 A0. For this purpose, we have developed a technological mode of multilayer metallization for producing thin PtSi-Si contacts. © Pleiades Publishing, Ltd. 2024. ISSN 1063-7397, Russian Microelectronics, 2024, Vol. 53, No. 4, pp. 303–305. Pleiades Publishing, Ltd., 2024.
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页码：303 / 305
页数：2
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