Physics-based 2D analytical potential model with disorder effects for scaling a-IGZO TFT via dual material gate engineering

被引：0
|
作者：
Huang, Shijie [1 ,2 ,3 ]
Guo, Jingrui [1 ,2 ,3 ]
Xu, Lihua [1 ,3 ]
Wang, Lingfei [1 ,2 ,3 ]
Li, Ling [1 ]
机构：
[1] Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing,100029, China
[2] University of Chinese Academy of Sciences, Beijing,100049, China
[3] Peng Cheng Laboratory, Shenzhen,518038, China
来源：
Japanese Journal of Applied Physics | 2022年 / 61卷 / 10期
关键词：
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摘要：
Poisson equation
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