Thick waveguides of low-stress stoichiometric silicon nitride on sapphire (SiNOS)

被引：1

作者：

Martinussen, Simen ^{[1
,2
]}

Berenschot, Erwin ^{[3
]}

Bonneville, Dawson ^{[1
]}

Wang, Kai ^{[1
]}

Dijkstra, Meindert ^{[1
]}

Tas, Niels ^{[3
]}

Garcia-blanco, Sonia ^{[1
]}

Tiggelaar, Roald ^{[4
]}

机构：

[1] Univ Twente, MESA Inst, Integrated Opt Syst, POB 217, NL-7500 AE Enschede, Netherlands

[2] Epiphany, Hengelosestr 500, NL-7521 AN Enschede, Netherlands

[3] Univ Twente, MESA Inst, Mesoscale Chem Syst, POB 217, NL-7500 AE Enschede, Netherlands

[4] Univ Twente, MESA Inst, NanoLab Cleanroom, POB 217, NL-7500 AE Enschede, Netherlands

来源：

OPTICS EXPRESS | 2024年 / 32卷 / 21期

关键词：

FREQUENCY COMB GENERATION; HIGH-CONFINEMENT; SUPERCONTINUUM GENERATION; FABRICATION; RESONATORS; PHOTONICS;

D O I：

10.1364/OE.536578

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Low-stress stoichiometric silicon nitride (Si3N4) waveguides with an unprecedented thickness of up to 1350 nm and a width in the range of 2.2 - 2.7 mu m are fabricated using a single LPCVD step on sapphire substrates (SiNOS). Optical characterization of proof-of-concept similar to 1.35 mu m thick waveguides show propagation losses in the order of 0.30 +/- 0.01 dB/cm at 1600 nm. The proposed process offers a simple route to high confinement Si3N4 waveguides, enabling applications in nonlinear and mid-IR integrated photonics. (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

引用

页码：36835 / 36847

页数：13

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