Heavy ion radiation and temperature effects on SiC schottky barrier diode

被引：0
|
作者：
Wang, Duowei [1 ]
Hu, Rongbin [2 ]
Chen, Gang [2 ]
Tang, Changqin [3 ]
Ma, Yao [1 ,3 ]
Gong, Min [1 ,3 ]
Yu, Qingkui [4 ]
Cao, Shuang [4 ]
Li, Yun [1 ,3 ]
Huang, Mingmin [1 ,3 ]
Yang, Zhimei [1 ,3 ]
机构：
[1] Key Laboratory for Microelectronics, College of Physics, Sichuan University, Chengdu,610064, China
[2] Science and Technology on Analog Integrated Circuit Laboratory, Chongqing,400060, China
[3] Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu,610064, China
[4] China Academy of Space Technology, Beijing,100029, China
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 2021年 / 491卷
关键词：
25;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
页码：52 / 58
相关论文
共 50 条
  • [1] Heavy ion radiation and temperature effects on SiC schottky barrier diode
    Wang, Duowei
    Hu, Rongbin
    Chen, Gang
    Tang, Changqin
    Ma, Yao
    Gong, Min
    Yu, Qingkui
    Cao, Shuang
    Li, Yun
    Huang, Mingmin
    Yang, Zhimei
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2021, 491 : 52 - 58
  • [2] Heavy ion-induced damage in SiC Schottky barrier diode
    Kamezawa, C
    Sindou, H
    Hirao, T
    Ohyama, H
    Kuboyama, S
    PHYSICA B-CONDENSED MATTER, 2006, 376 : 362 - 366
  • [3] Investigation of temperature and flux effects on heavy ion induced degradation in SiC Schottky diode
    Yan, Xiaoyu
    Hu, Peipei
    Zhao, Shiwei
    Chen, Qiyu
    Cai, Li
    Jiao, Yang
    Yang, Jinhu
    Li, Xinyu
    Sun, Youmei
    Liu, Jie
    MICROELECTRONICS RELIABILITY, 2023, 150
  • [4] Damage mechanism of SiC Schottky barrier diode irradiated by heavy ions
    Chao, Peng
    Lei Zhi-Feng
    Zhang Zhan-Gang
    He Yu-Juan
    Chen Yi-Qiang
    Lu Guo-Guang
    Yun, Huang
    ACTA PHYSICA SINICA, 2022, 71 (17)
  • [5] Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode
    Navarro, Dondee
    Herrera, Fernando
    Zenitani, Hiroshi
    Miura-Mattausch, Mitiko
    Yorino, Naoto
    Mattausch, Hans Jurgen
    Takusagawa, Mamoru
    Kobayashi, Jun
    Hara, Masafumi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [6] Investigation of swift heavy ion irradiation effects on Au/CdTe and Au/CdZnTe Schottky barrier diode
    Veeramani, P.
    Haris, M.
    Babu, S. Moorthy
    Kanjilal, D.
    Sugathan, P.
    RADIATION MEASUREMENTS, 2008, 43 (01) : 56 - 61
  • [7] UNBALANCE AND TEMPERATURE EFFECTS IN SCHOTTKY-BARRIER DIODE MIXERS
    BANERJEE, AR
    GARDINER, JG
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1973, 34 (05) : 619 - 628
  • [8] Optimized Annealing Temperature of Ti/4H-SiC Schottky Barrier Diode
    Yun, Seung Bok
    Kim, Jeong Han
    Kang, Ye Hwan
    Lee, Jung Hoon
    Kim, Ki-Hyun
    Kim, Sung-Su
    Jung, Eun Sik
    Kang, In-Ho
    Shin, Hoon Kyu
    Yang, Chang Heon
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (05) : 3406 - 3408
  • [9] Schottky Barrier Characteristic Analysis on 4H-SiC Schottky Barrier Diodes With Heavy Ion-Induced Degradation
    Wu, Zhikang
    Bai, Yun
    Yang, Chengyue
    Lu, Jiang
    Yang, Liao
    Tang, Yidan
    Tian, Xiaoli
    Liu, Xinyu
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 69 (04) : 932 - 937
  • [10] Temperature dependence junction parameters: Schottky Barrier, Flatband Barrier,and Temperature Coefficients of Schottky Diode
    Dhimmar, J. M.
    Modi, B. P.
    PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 89 - 90
12345