Herein, the Zn2V2O7 electro-ceramic pyrovanadate was synthesized via a conventional solid-state reaction technique and calcined at 700 degrees C. The single phase formation of Zn2V2O7 pyrovanadate crystallized in the monoclinic structure with C 12/ c 1 space group was confirmed by X-ray diffraction (XRD). The XRD powder diffraction profile was analyzed by Rietveld refinement to investigate the structural details of the compound. The complex impedance analysis was carried out in the frequency domain of 83- 2 x 106 Hz over a temperature range of 453-613 K to study the electrical charge conduction and dielectric relaxation mechanism in the material which revealed the presence of the distribution of relaxation times with thermal charge activation. Depressed semicircles in the Nyquist plots were modeled by an equivalent circuit with configuration (RGCG)(RGBQGB) which resolved the contributions of grains and grain boundaries towards the transport properties of the material. The electrical conductivity spectra followed Jonscher's power law behavior and the temperature variation of frequency exponent suggested correlated barrier hopping (CBH) as the governing transport mechanism in the Zn2V2O7 pyrovanadate system. The comparison between scaling behaviors of imaginary parts of impedance and modulus advocated the temperature-independent nature of relaxation time distribution. The imaginary electrical modulus spectra were reproduced by the Kohlrausch, Williams, and Watt formulism, and the fitted parameters confirmed the non-Debye type nature of the dielectric relaxation. Further, the Haveriliak-Negami function was employed to investigate the dielectric response of the material which was found to be consistent with impedance, conductivity, and modulus analyses. The frequency dispersion of the tangent loss verified that the hopping mechanism was thermally activated.
机构:
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, ChengduSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu
Cao H.
Chen L.
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School of Electronic Science and Engineering, University of Electronic Science and Technology of China, ChengduSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu
Chen L.
Li B.
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School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu
State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu
National Engineering Research Center of Electromagnetic Radiation Control Materials, ChengduSchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu