A novel low-permittivity Lu2MgAl4SiO12 microwave dielectric ceramic with garnet-type structure

被引:0
|
作者
He, Chuansheng [1 ]
Li, Yingxiang [1 ]
Wang, Fei [4 ]
Hou, Zegui [1 ]
Liu, Wei [1 ]
Liang, Deyin [1 ]
Tang, Bin [2 ]
Fang, Zixuan [2 ]
Shi, Zitao [2 ]
Chen, Jingjing [2 ]
Li, Hao [3 ]
机构
[1] Shaoyang Univ, Coll Informat Engn, Shaoyang 422000, Peoples R China
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 611731, Peoples R China
[3] Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Peoples R China
[4] Southwest Petr Univ, Sch Civil Engn & Geomat, Chengdu 610500, Peoples R China
关键词
CRYSTAL-STRUCTURE; BOND CHARACTERISTICS; LOW-TEMPERATURE; CHEMICAL-BOND; MICROSTRUCTURES; CONSTANTS; YB; LN;
D O I
10.1007/s10854-024-13577-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For the timely transmission of signals, the research of low dielectric constant microwave ceramics is essential. In this study, a new type of low-permittivity Lu2MgAl4SiO12 microwave dielectric ceramic was prepared by traditional solid-phase method. The successful synthesis of Lu2MgAl4SiO12 ceramics with cubic crystal system and space group Ia-3d (230) was determined by XRD and Rietveld refinement. SEM observation confirmed the garnet structure of Lu2MgAl4SiO12 ceramics, and verified the dense structure of the ceramic samples with a relative density of 99.1%. In addition, the influence of relative density and packing fraction on Q x f was studied by analyzing the Lu2MgAl4SiO12 system. The findings revealed that tau f was affected by the valence state of VSi-O bond. Finally, Lu2MgAl4SiO12 sample sintered at 1490 degrees C demonstrated notable microwave properties (epsilon r = 9.13, Q x f = 15,100 GHz, tau f = -47.1 ppm/degrees C).
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页数:9
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