Room temperature nanoimprint aided by electron beam irradiation for polysilsesquioxane

被引:0
|
作者
Yasui, Manabu [1 ]
Nishi, Yoshitake [1 ]
Kurouchi, Masahito [1 ]
Kaneko, Satoru [1 ]
Mitsuhashi, Masahiko [1 ]
机构
[1] Kanagawa Inst Ind Sci & Technol, Ebina, Kanagawa 2430435, Japan
关键词
room temperature nanoimprint; polysilsesquioxane; electron beam irradiation; nanostructure; SURFACE-PLASMON RESONANCE; RESIDUAL LAYER THICKNESS; ENERGY-CONVERSION; RESIST; ACID; HSQ;
D O I
10.35848/1347-4065/ad7963
中图分类号
O59 [应用物理学];
学科分类号
摘要
Recently, the application of inorganic nano-periodic structures has become an active area of research. Polysilsesquioxane (PSQ) is known as a hydrolytically stable organic-inorganic hybrid material and this study proposes RT nanoimprint using methylated poly silsesquioxane (Me-PSQ) dissolved in a high-boiling solvent. PSQ electron beam cross-linked by a high electron beam irradiation maintained the shape of nanopatterns and enhanced the heat resistance. As a result of the analysis of the Fourier transform infrared spectrophotometer (FT-IR), a siloxane linkage (Si-O-Si bridging) constitutes a core element of PSQ. The peak wavenumber of Si-O-Si bridging at cross-linked PSQ by electron beam irradiation shifted from 1115 to 1135 cm-1. The peaks shifted towards the high wavenumber side and approached the second peak (1170 cm-1) of the Si-O-Si stretching vibration of quartz. This result suggests that the physical properties of electron-beam irradiated PSQ approach those of quartz.
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页数:6
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