Band and interface engineering for quantum dot solar cells

被引：0
|
作者：
Zhou R. [1 ]
Li X. [1 ]
Hu L. [2 ]
Zhu J. [3 ]
机构：
[1] School of Electrical Engineering and Automation, Hefei University of Technology, Hefei
[2] Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang
[3] Academy of Opto-Electric Technology, Hefei University of Technology, Hefei
来源：
Zhou, Ru (zhouru@hfut.edu.cn); Hu, Liusen (huls_caep@126.com) | 1600年 / Chinese Academy of Sciences卷 / 51期
关键词：
Band engineering; Interface engineering; Quantum dot; Solar cell;
D O I：
10.1360/SST-2021-0063
中图分类号：
学科分类号：
摘要：
Semiconductor quantum dots (QDs) have received tremendous attention for solar cells owing to their excellent physical and chemical properties. In quantum dot solar cells (QDSCs), the low charge separation efficiency and low charge collection efficiency are two critical factors that greatly restrict their photovoltaic performance. Band engineering and interface engineering are of great significance for accelerating the separation of photogenerated electron-hole pairs and improving the efficiency of carrier collection to improve the performance of QDSCs. This article reviews the applications of band engineering and interfaces engineering for performance optimization from the perspectives of materials, films, and devices. Firstly, the features of QDs and the working principle and device structure of QDSCs are introduced. Secondly, based on the latest research progress of QDSCs, we overview the specific strategies of the band and interface engineering as well as their positive roles in improving the device performance. Finally, the correlation between band and interface issues and the further research direction of the band and interface engineering for QDSCs prospects are discussed. © 2021, Science Press. All right reserved.
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页码：1429 / 1444
页数：15
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