Investigation of SiNx:H Surface Passivation Impact on InAsP/InGaAs e-SWIR Photodiodes

被引：0
|
作者：
Satilmis, Mert [1 ]
Gezgin, Irfan Alp [1 ]
Tok, Cagri [1 ]
Keles, Habibe [1 ]
Kolkowski, Walery [2 ]
Pasternak, Iwona [2 ]
Oguz, Fikri [1 ]
Strupinski, Wlodek [2 ]
Ozbay, Ekmel [3 ,4 ]
机构：
[1] Nanotechnology Research Center, Ankara,06800, Turkey
[2] VIGO Photonics S. A., Ożarów Mazowiecki,05-580, Poland
[3] Bilkent University, Department of Physics, Department of Electrical and Electronics Engineering, Ankara,06800, Turkey
[4] Bilkent University, Nanotechnology Research Center, NANOTAM, Ankara,06800, Turkey
来源：
IEEE Sensors Journal | 2024年 / 24卷 / 19期
关键词：
Wlodek Strupinski received the M.Sc. degree in Material Science and the Ph.D. degree in Physics from Warsaw University of Technology in 1981 and 1989; respectively. During the post-doc fellowship funded by United Nations at Chalmers Technical Univ; Goteborg; Sweden in 1990-1991 he was conducting the research on microelectronic GaAs transistor devices. In 1992 he was appointed the head of epitaxial lab at the Institute of Electronic Materials Technology in Warsaw where he developed many epitaxial technologies; later successfully used in experimental or commercial production. In 2018 he joined the VIGO Photonics S.A. where he is head of epitaxy division; being responsible for the development and production of various III-V compound semiconductor heterostructures for photonics and microelectronics. He has more than 30 yearsu2019 experience in III-V technology; specializing in vapor phase epitaxy (VPE) and metalorganic vapor phase epitaxy (MOVPE) of GaAs-; InP-; GaN-related compounds; SiC as well as in graphene and other 2D nanomaterials;
D O I：
10.1109/JSEN.2024.3443747
中图分类号：
学科分类号：
摘要：
43
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页码：29927 / 29936
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