Characterization and modeling of the mobility, threshold voltage, and subthreshold swing in p-GaN gate HEMTs at cryogenic temperatures

被引：0
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作者：
Singh, Shivendra Kumar [1 ,2 ]
Ngo, Thien Sao [1 ]
Wu, Tian-Li [1 ,3 ]
Chauhan, Yogesh Singh [2 ]
机构：
[1] International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
[2] Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
[3] Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
来源：
Applied Physics Letters | 2024年 / 125卷 / 15期
关键词：
Gallium nitride;
D O I：
10.1063/5.0223576
中图分类号：
学科分类号：
摘要：
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